PESD5V0X1BQ_PESD5V0X1BT_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 30 October 2008

5 of 13

NXP Semiconductors

PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

bidirectional configuration

unidirectional configuration

Fig 2.

Diode capacitance as a function of reverse

voltage; typical values

Fig 3.

Diode capacitance as a function of reverse

voltage; typical values

Fig 4.

V-I characteristics for a bidirectional

ESD protection diode

Fig 5.

V-I characteristics for a unidirectional

ESD protection diode

VR (V)

05

4

23

1

006aab249

0.88

0.92

0.84

0.96

1.0

Cd

(pF)

0.80

05

4

23

1

006aab348

1.8

1.7

1.9

2.0

(pF)

1.6

006aaa676

−

+

006aaa407

V

I

P-N

−

+