PESD5V0S2UQ datasheet(2/13 Pages) NXP

Part #	PESD5V0S2UQ

Description	Double ESD protection diodes in SOT663 package

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

FEATURES

• Uni-directional ESD protection of up to two lines

• Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs

• Low clamping voltage: V(CL)R = 20 V at Ipp =15A

• Low reverse leakage current: IRM <1nA

• ESD protection > 30 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs.

APPLICATIONS

• Computers and peripherals

• Communication systems

• Audio and video equipment

• High speed data lines

• Parallel ports.

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT663

plastic package. Designed to protect up to two

transmission or data lines from ElectroStatic Discharge

(ESD) damage.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER

MARKING CODE

PESD3V3S2UQ

E1

PESD5V0S2UQ

E2

PESD12VS2UQ

E3

PESD15VS2UQ

E4

PESD24VS2UQ

E5

SYMBOL

PARAMETER

VALUE

UNIT

VRWM

reverse stand-off

voltage

3.3, 5, 12, 15

and 24

V

Cd

diode capacitance

VR =0V;

f = 1 MHz

200, 150, 38, 32

and 23

pF

number of

protected lines

2

DESCRIPTION

1

cathode 1

2

cathode 2

3

common anode

sym022

2

1

3

1

2

3

001aaa732

Fig.1 Simplified outline (SOT663) and symbol.

Rev. 03 - 11 September 2008

2 of 13

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PESD5V0S2UQ Datasheet(PDF) 2 Page - NXP Semiconductors

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