NXP Semiconductors

Product specification

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

ESD maximum ratings

Notes

1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.

2. Measured across either pins 1 and 3 or pins 2 and 3.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

ESD

electrostatic discharge

capability

IEC 61000-4-2 (contact discharge);

notes 1 and 2

PESD3V3S2UQ

30

kV

PESD5V0S2UQ

30

kV

PESD12VS2UQ

30

kV

PESD15VS2UQ

30

kV

PESD24VS2UQ

23

kV

HBM MIL-Std 883

PESDxS2UQ series

10

kV

ESD standards compliance

ESD STANDARD

CONDITIONS

IEC 61000-4-2; level 4 (ESD); see Fig.3

>15 kV (air); > 8 kV (contact)

HBM MIL-Std 883; class 3

>4 kV

handbook, halfpage

010

20

t (

µs)

Ipp

(%)

40

120

0

40

80

30

MLE218

100 % Ipp; 8 µs

50 % Ipp; 20 µs

Fig.2

8/20

µs pulse waveform according to

IEC 61000-4-5.

001aaa191

100 %

90 %

t

30 ns

60 ns

10 %

Fig.3

ElectroStatic Discharge (ESD) pulse

waveform according to IEC 61000-4-2.

Rev. 03 - 11 September 2008

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