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UBA2024P Datasheet(PDF) 7 Page - NXP Semiconductors |
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UBA2024P Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page UBA2024_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 16 October 2008 7 of 12 NXP Semiconductors UBA2024 Half-bridge power IC for CFL lamps 9. Thermal characteristics [1] In accordance with IEC 60747-1 10. Characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] 95 K/W Rth(j-c) thermal resistance from junction to case in free air [1] 16 K/W Table 5. Characteristics Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Parameter Conditions Min Typ Max Unit High-voltage supply VHV high-voltage supply voltage t < 0.5 s; IHV < 30 mA 0 - 550 V VFS floating supply voltage t < 0.5 s; IHV < 30 mA 0 - 564 V Low-voltage supply VDD low-voltage output supply voltage VHV = 100 V; ROSC = ∞;VSW =VDD; VRC =0V 11.7 12.5 13.3 V Start-up state IHV high-voltage supply current VHV = 100 V; ROSC = ∞;VSW =VDD; VRC =0V - - 0.39 mA VDD(start) start of oscillation voltage 10 11 12 V VDD(stop) stop of oscillation voltage 8 8.5 9 V VDD(hys) start-stop hysteresis voltage 2 2.5 3 V Output stage RHS(on) HS transistor on-resistance VHV = 310 V; Id = 100 mA - 9.7 11 Ω RLS(on) LS transistor on-resistance Id = 100 mA - 8.5 9.4 Ω VHS(d) HS body diode forward voltage If = 200 mA 1.4 1.8 2.2 V VLS(d) LS body diode forward voltage If = 200 mA 1.2 1.6 2.0 V IHS(sat) HS transistor saturation current Vds =30V; Tj ≤ 125 °C; VHV = 310 V 900 - - mA ILS(sat) LS transistor saturation current Vds =30V; Tj ≤ 125 °C 900 - - mA IO(max) maximum output current RMS value - - 220 mA Vboot bootstrap diode drop voltage If = 1 mA 0.7 1.0 1.3 V tno non-overlap time 1 1.35 1.7 µs VFS(lock) floating supply lockout voltage 3.6 4.2 4.8 V IFS floating supply current VHV = 310 V; VFS = 12.2 V 10 14 18 µA |
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