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BQ24075RGTRG4 Datasheet(PDF) 3 Page - Texas Instruments

Part # BQ24075RGTRG4
Description  1.5A USB-FRIENDLY Li-Ion BATTERY CHARGER AND POWER-PATH MANAGEMENT IC
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ24075RGTRG4 Datasheet(HTML) 3 Page - Texas Instruments

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DISSIPATION RATINGS
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
bq24072, bq24073
bq24074, bq24075
www.ti.com...................................................................................................................................... SLUS810A – SEPTEMBER 2008 – REVISED DECEMBER 2008
POWER RATING
PACKAGE(1)
RθJA
RθJC
TA ≤ 25°C
TA = 85°C
RGT (2)
39.47 °C/W
2.4 °C/W
2.3 W
225mW
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2)
This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is
connected to the ground plane by a 2x3 via matrix.
MIN
MAX
UNIT
IN voltage range
4.35
26
V
VI
’72, ’73, ‘75
4.35
6.4
IN operating voltage range
V
‘74
4.35
10.2
IIN
Input current, IN pin
1.5
A
IOUT
Current, OUT pin
4.5
A
IBAT
Current, BAT pin (Discharging)
4.5
A
ICHG
Current, BAT pin (Charging)
1.5(1)
A
TJ
Junction Temperature
–40
125
°C
RILIM
Maximum input current programming resistor
1100
8000
RISET
Fast-charge current programming resistor (2)
590
3000
RITERM
Termination current programming resistor
0
15
k
RTMR
Timer programming resistor
18
72
k
(1)
The IC operational charging life is reduced to 20,000 hours, when charging at 1.5A and 125°C. The thermal regulation feature reduces
charge current if the IC’s junction temperature reaches 125°C; thus without a good thermal design the maximum programmed charge
current may not be reached.
(2)
Use a 1% tolerance resistor for RISET to avoid issues with the RISET short test when using the maximum charge current setting.
Over junction temperature range (0°
≤ TJ ≤ 125°C) and the recommended supply voltage range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
UVLO
Undervoltage lock-out
VIN: 0 V → 4 V
3.2
3.3
3.4
V
Vhys
Hysteresis on UVLO
VIN: 4 V → 0 V
200
300
mV
Input power detected when VIN > VBAT + VIN(DT)
VIN(DT)
Input power detection threshold
55
80
130
mV
VBAT = 3.6 V, VIN: 3.5 V → 4 V
Vhys
Hysteresis on VIN(DT)
VBAT = 3.6 V, VIN: 4 V → 3.5 V
20
mV
Time measured from VIN: 0 V → 5 V 1 µs
Deglitch time, input power detected
tDGL(PGOOD)
4
ms
status
rise-time to PGOOD = LO
(’72, ’73, ’75) VIN: 5 V → 7 V
6.4
6.6
6.8
VOVP
Input overvoltage protection threshold
V
(’74) VIN: 5 V → 11 V
10.2
10.5
10.8
Vhys
Hysteresis on OVP
(’72, ’73, ’75) VIN: 7 V → 5V
110
mV
(’74) VIN: 11 V → 5 V
175
tDGL(OVP)
Input overvoltage blanking time (OVP
50
µs
fault deglitch)
Time measured from VIN: 11 V → 5 V with 1 µs
tREC
Input overvoltage recovery time
2
ms
fall-time to PGOOD = LO
ILIM, ISET SHORT CIRCUIT DETECTION (CHECKED DURING STARTUP)
ISC
Current source
VIN > UVLO and VIN > VBAT + VIN(DT)
1.3
mA
VSC
VIN > UVLO and VIN > VBAT + VIN(DT)
520
mV
Copyright © 2008, Texas Instruments Incorporated
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Product Folder Link(s): bq24072 bq24073 bq24074 bq24075


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