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BQ24075RGTRG4 Datasheet(PDF) 3 Page - Texas Instruments |
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BQ24075RGTRG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 38 page DISSIPATION RATINGS RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS bq24072, bq24073 bq24074, bq24075 www.ti.com...................................................................................................................................... SLUS810A – SEPTEMBER 2008 – REVISED DECEMBER 2008 POWER RATING PACKAGE(1) RθJA RθJC TA ≤ 25°C TA = 85°C RGT (2) 39.47 °C/W 2.4 °C/W 2.3 W 225mW (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. (2) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is connected to the ground plane by a 2x3 via matrix. MIN MAX UNIT IN voltage range 4.35 26 V VI ’72, ’73, ‘75 4.35 6.4 IN operating voltage range V ‘74 4.35 10.2 IIN Input current, IN pin 1.5 A IOUT Current, OUT pin 4.5 A IBAT Current, BAT pin (Discharging) 4.5 A ICHG Current, BAT pin (Charging) 1.5(1) A TJ Junction Temperature –40 125 °C RILIM Maximum input current programming resistor 1100 8000 Ω RISET Fast-charge current programming resistor (2) 590 3000 Ω RITERM Termination current programming resistor 0 15 k Ω RTMR Timer programming resistor 18 72 k Ω (1) The IC operational charging life is reduced to 20,000 hours, when charging at 1.5A and 125°C. The thermal regulation feature reduces charge current if the IC’s junction temperature reaches 125°C; thus without a good thermal design the maximum programmed charge current may not be reached. (2) Use a 1% tolerance resistor for RISET to avoid issues with the RISET short test when using the maximum charge current setting. Over junction temperature range (0° ≤ TJ ≤ 125°C) and the recommended supply voltage range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT UVLO Undervoltage lock-out VIN: 0 V → 4 V 3.2 3.3 3.4 V Vhys Hysteresis on UVLO VIN: 4 V → 0 V 200 300 mV Input power detected when VIN > VBAT + VIN(DT) VIN(DT) Input power detection threshold 55 80 130 mV VBAT = 3.6 V, VIN: 3.5 V → 4 V Vhys Hysteresis on VIN(DT) VBAT = 3.6 V, VIN: 4 V → 3.5 V 20 mV Time measured from VIN: 0 V → 5 V 1 µs Deglitch time, input power detected tDGL(PGOOD) 4 ms status rise-time to PGOOD = LO (’72, ’73, ’75) VIN: 5 V → 7 V 6.4 6.6 6.8 VOVP Input overvoltage protection threshold V (’74) VIN: 5 V → 11 V 10.2 10.5 10.8 Vhys Hysteresis on OVP (’72, ’73, ’75) VIN: 7 V → 5V 110 mV (’74) VIN: 11 V → 5 V 175 tDGL(OVP) Input overvoltage blanking time (OVP 50 µs fault deglitch) Time measured from VIN: 11 V → 5 V with 1 µs tREC Input overvoltage recovery time 2 ms fall-time to PGOOD = LO ILIM, ISET SHORT CIRCUIT DETECTION (CHECKED DURING STARTUP) ISC Current source VIN > UVLO and VIN > VBAT + VIN(DT) 1.3 mA VSC VIN > UVLO and VIN > VBAT + VIN(DT) 520 mV Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): bq24072 bq24073 bq24074 bq24075 |
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