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CC2590RGVTG4 Datasheet(PDF) 2 Page - Texas Instruments |
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CC2590RGVTG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 18 page ABSOLUTE MAXIMUM RATINGS RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS CC2590 SWRS080 – SEPTEMBER 2008 ........................................................................................................................................................................................ www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device. PARAMETER VALUE UNIT Supply voltage All supply pins must have the same voltage –0.3 to 3.6 V Voltage on any digital pin –0.3 to VDD + 0.3, max 3.6 V Input RF level +10 dBm Storage temperature range –50 to 150 °C Reflow soldering temperature According to IPC/JEDEC J-STD-020 260 °C Human Body Model, all pins except pin 10 2000 V ESD Human Body Model, pin 10 1900 V Charged Device Model 1000 V The operating conditions for CC2590 are listed below. PARAMETER MIN MAX UNIT Ambient temperature range –40 85 °C Operating supply voltage 2.0 3.6 V Operating frequency range 2400 2483.5 MHz TC = 25°C, VDD = 3.0V , fRF= 2440MHz (unless otherwise noted). Measured on CC2590EM reference design including external matching components. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Receive current, High Gain Mode HGM = 1 3.4 4.0 mA Receive current, Low Gain Mode HGM = 0 1.8 2.0 mA PIN = 0.5 dBm, POUT = 12.2 dBm 22.1 mA Transmit current PIN = –3.5 dBm, POUT = 10.0 dBm 16.8 mA Transmit current No input signal 8.0 10.0 mA Power down current EN = PAEN = 0 0.1 0.3 µA High input level (control pins) EN, PAEN, HGM, RXTX 1.3 VDD V Low input level (control pins) EN, PAEN, HGM, RXTX 0.3 V Power down - Receive mode switching 1.4 µs time Power down - Transmit mode switching 0.8 µs time RF Receive Gain, High Gain Mode HGM = 1 11.4 dB Gain, Low Gain Mode HGM = 0 0 dB Gain variation, 2400 – 2483.5 MHz, High HGM = 1 1.2 dB Gain Mode Gain variation, 2.0V – 3.6V, High Gain HGM = 1 1.7 dB Mode HGM = 1, including internal T/R switch and external Noise figure, High Gain Mode 4.6 dB antenna match Input 1 dB compression, High Gain Mode HGM = 1 –21 dBm 2 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): CC2590 |
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