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VNP10N07FI Datasheet(PDF) 3 Page - STMicroelectronics |
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VNP10N07FI Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page  ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it gfs ( ∗)Forward Transconductance VDS =13 V ID =5 A 6 8 S Coss Output Capacit ance VDS = 13 V f = 1 MHz Vin = 0 350 500 pF SWITCHING (**) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime VDD =15 V Id =5 A Vgen =10 V Rgen =10 Ω (see f igure 3) 50 80 230 100 100 160 400 180 ns ns ns ns td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime VDD =15 V Id =5 A Vgen =10 V Rgen = 1000 Ω (see f igure 3) 600 0.9 3.8 1.7 900 2 6 2.5 ns µs µs µs (di/ dt)on Turn-on Current Slope VDD =15 V ID =5 A Vin =10 V Rgen =10 Ω 60 A/ µs Qi Total Input Charge VDD =12 V ID =5 A Vin = 10 V 30 nC SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VSD ( ∗)Forward On Voltage ISD =5 A Vin =0 1.6 V trr ( ∗∗) Qrr ( ∗∗) IRRM ( ∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A di/dt = 100 A/ µs VDD =30 V Tj =25 oC (see t est circuit, figure 5) 125 0.3 4.8 ns µC A PROTECTION Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it Ilim Drain Current Limit Vin =10 V VDS =13 V Vin =5 V VDS =13 V 7 7 10 10 14 14 A A tdlim ( ∗∗) Step Response Current Limit Vin =10 V Vin =5 V 20 50 30 80 µs µs Tjsh ( ∗∗) Overtemperature Shutdown 150 oC Tjrs ( ∗∗) Overtemperature Reset 135 oC Igf ( ∗∗) Fault Sink Current Vin =10 V VDS =13 V Vin =5 V VDS =13 V 50 20 mA mA Eas ( ∗∗) Single Pulse Avalanche Energy st arting Tj =25 oCVDD =20 V Vin =10 V Rgen =1 K Ω L= 10 mH 0. 4 J ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ∗∗) Parameters guaranteed by design/characterization VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 3/14 |
Similar Part No. - VNP10N07FI |
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Similar Description - VNP10N07FI |
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