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SR05 Datasheet(PDF) 5 Page - Semtech Corporation |
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SR05 Datasheet(HTML) 5 Page - Semtech Corporation |
5 / 9 page 5 2005 Semtech Corp. www.semtech.com PROTECTION PRODUCTS SR05 PIN Descriptions For negative events, the bottom diode will be biased when the voltage exceeds the V F of the diode. At first approximation, the clamping voltage due to the charac- teristics of the protection diodes is given by: V C = VCC + VF (for positive duration pulses) V C = -VF (for negative duration pulses) However, for fast rise time transient events, the effects of parasitic inductance must also be consid- ered as shown in Figure 2. Therefore, the actual clamping voltage seen by the protected circuit will be: V C = VCC + VF + LP diESD/dt (for positive duration pulses) V C = -VF - LG diESD/dt (for negative duration pulses) ESD current reaches a peak amplitude of 30A in 1ns for a level 4 ESD contact discharge per IEC 61000-4-2. Therefore, the voltage overshoot due to 1nH of series inductance is: V = L P diESD/dt = 1X10 -9 (30 / 1X10-9) = 30V Example: Consider a V CC = 5V, a typical VF of 30V (at 30A) for the steering diode and a series trace inductance of 10nH. The clamping voltage seen by the protected IC for a positive 8kV (30A) ESD pulse will be: V C = 5V + 30V + (10nH X 30V/nH) = 335V This does not take into account that the ESD current is directed into the supply rail, potentially damaging any components that are attached to that rail. Also note that it is not uncommon for the V F of discrete diodes to exceed the damage threshold of the protected IC. This is due to the relatively small junction area of typical discrete components. It is also possible that the power dissipation capability of the discrete diode will be exceeded, thus destroying the device. The RailClamp is designed to overcome the inherent disadvantages of using discrete signal diodes for ESD suppression. The RailClamp’s integrated TVS diode helps to mitigate the effects of parasitic inductance in Figure 1 - “Rail- Figure 1 - “Rail- Figure 1 - “Rail- Figure 1 - “Rail- Figure 1 - “Rail-TTTTTo-Rail” Pr o-Rail” Pr o-Rail” Pr o-Rail” Pr o-Rail” Proooootttttection T ection T ection T ection T ection Topology opology opology opology opology (First Approximation) (First Approximation) (First Approximation) (First Approximation) (First Approximation) Figure 2 - The Effects of Parasitic Inductance Figure 2 - The Effects of Parasitic Inductance Figure 2 - The Effects of Parasitic Inductance Figure 2 - The Effects of Parasitic Inductance Figure 2 - The Effects of Parasitic Inductance When Using Discrete Components to Implement When Using Discrete Components to Implement When Using Discrete Components to Implement When Using Discrete Components to Implement When Using Discrete Components to Implement Rail- Rail- Rail- Rail- Rail-TTTTTo-Rail Pr o-Rail Pr o-Rail Pr o-Rail Pr o-Rail Proooootttttection ection ection ection ection Figure 3 - Rail- Figure 3 - Rail- Figure 3 - Rail- Figure 3 - Rail- Figure 3 - Rail-TTTTTo-Rail Pr o-Rail Pr o-Rail Pr o-Rail Pr o-Rail Proooootttttection Using ection Using ection Using ection Using ection Using RailClam RailClam RailClam RailClam RailClamp T p T p T p T p T VVVVVS Arra S Arra S Arra S Arra S Arrays ys ys ys ys Applications Information (continued) |
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