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SPA06N80C3 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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SPA06N80C3 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 13 page Rev. 2.6 Page 8 2007-08-30 SPP06N80C3 SPA06N80C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -1 10 0 10 1 10 2 10 A SPP06N80C3 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 14 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0 1 2 3 4 A 6 TJ(Start) = 25°C TJ(Start) = 125°C 15 Avalanche energy EAS = f (Tj) par.: ID = 1.2 A, VDD = 50 V 25 50 75 100 °C 150 Tj 0 25 50 75 100 125 150 175 200 mJ 250 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 720 740 760 780 800 820 840 860 880 900 920 940 V 980 SPP06N80C3 |
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