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SPA11N80C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPA11N80C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 13 page Rev. 2.4 Page 1 2005-08-24 SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor VDS 800 V RDS(on) 0.45 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P G-TO220-3-31 PG-TO220 P-TO220-3-31 1 2 3 Marking 11N80C3 11N80C3 Type Package Ordering Code SPP11N80C3 P G-TO220 Q67040-S4438 SPA11N80C3 P G-TO220-3-31 SP000216320 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 11 7.1 111) 7.11) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=2.2A, VDD=50V EAS 470 470 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 156 41 W SPP Operating and storage temperature Tj , Tstg -55...+150 °C |
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