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2SC3651 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC3651 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Ordering number:EN1779A 2SC3651 N2098HA (KT)/4217KI/2145KI, TS No.1779–1/3 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2038 [2SC3651] Applications · LF amplifiers, various drivers, muting circuit. Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. ˚C ˚C Electrical Characteristics at Ta = 25˚C E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) * Mounted on ceramic board (250mm2 ×0.8mm) Marking : CG r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 2 1V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 0 1V e g a t l o V e s a B - o t - r e t t i m EV O B E 5 1V t n e r r u C r o t c e ll o CIC 0 0 2A m ) e s l u P ( t n e r r u C r o t c e ll o CI P C 0 0 3A m n o i t a p i s s i D r o t c e ll o CPC 0 0 5W m PC* 3 . 1W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 8 = E 0 =1 . 0A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 0 1 = C 0 =1 . 0A µ n i a G t n e r r u C C D h E F 1V E C I , V 5 = C A m 0 1 = 0 0 50 0 0 10 0 0 2 h E F 2V E C I , V 5 = C A m 0 0 1 = 0 0 4 t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 0 1 = C A m 0 1 = 0 5 1z H M e c n a t i c a p a C t u p t u OC b o V B C z H M 1 = f , V 0 1 = 5 . 6F p |
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