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2SC3651 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # 2SC3651
Description  High hFE, Low-Frequency General-Purpose Amplifier Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC3651 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN1779A
2SC3651
N2098HA (KT)/4217KI/2145KI, TS No.1779–1/3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038
[2SC3651]
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO≥100V).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V).
· Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
* Mounted on ceramic board (250mm2
×0.8mm)
Marking : CG
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