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WS57C291C-35T Datasheet(PDF) 1 Page - STMicroelectronics |
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WS57C291C-35T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 7 page PRODUCT SELECTION GUIDE PARAMETER 191C/291C-25 191C/291C-35 191C/291C-45 191C/291C-55 Address Access Time (Max) 25 ns 35 ns 45 ns 55 ns CS to Output Valid Time (Max) 12 ns 20 ns 20 ns 20 ns HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 — tACC = 25 ns and N82S191 Bipolar PROMs —tCS = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming • ESD Protection Exceeds 2000V • Available in 300 Mil DIP and PLDCC GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are currently using Bipolar PROMs. The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier (PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges. WS57C191C/291C VCC A8 A9 A10 CS1/VPP CS2 CS3 O7 O6 O5 O4 O3 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND A10 CS1/VPP CS2 CS3 NC O7 O6 A5 A6 A7 VCC A8 A9 NC A4 A3 A2 A1 A0 NC O0 O1 O2 NC O3 O4 O5 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 1 43 2 28 27 26 25 24 23 22 21 20 19 5 6 7 8 9 10 11 12 13 14 15 16 17 18 TOP VIEW Chip Carrier CERDIP/Plastic DIP PIN CONFIGURATION 2-7 ROW DECODER EPROM ARRAY 16,384 BITS COLUMN DECODER SENSE AMPLIFIERS 8 CS2 CS3 OUTPUTS CS1/ VPP A0 - A4 COLUMN ADDRESSES A5 - A10 ROW ADDRESSES 6 5 BLOCK DIAGRAM Return to Main Menu |
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