RFG45N06_02 datasheet(2/8 Pages) FAIRCHILD

Part #	RFG45N06

Description	45A, 60V, 0.028 Ohm, N-Channel Power

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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RFG45N06, RFP45N06, RF1S45N06SM Rev. B

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

RFG45N06, RFP45N06

RF1S45N06SM

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

60

V

Drain to Gate Voltage (RG = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

60

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

45

Refer to Peak Current Curve

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

131

0.877

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

60

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

2

-

4

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

1

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V (125

oC)

-

25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

±100

nA

Drain Source On Resistance (Note 2)

rDS(ON)

ID = 45A, VGS = 10V (Figure 9)

-

0.028

Ω

Turn-On Time

tON

VDD = 30V, ID = 45A

RL = 0.667Ω, VGS = +10V

RG = 3.6Ω (Figure 13)

-

120

ns

Turn-On Delay Time

td(ON)

-12-

ns

Rise Time

tr

-74-

ns

Turn-Off Delay Time

td(OFF)

-37-

ns

Fall Time

tf

-16-

ns

Turn-Off Time

tOFF

-

80

ns

Total Gate Charge

Qg(TOT)

VGS = 0 to 20V

VDD = 48V, ID = 45A,

RL = 1.07Ω

Ig(REF) = 1.5mA

(Figure 13)

-

125

150

nC

Gate Charge at 10V

Qg(10)

VGS = 0 to 10V

-

67

80

nC

Threshold Gate Charge

Qg(TH)

VGS = 0 to 2V

-

3.7

4.5

nC

Input Capacitance

CISS

VDS = 25V, VGS = 0V

f = 1MHz (Figure 12)

-

2050

-

pF

Output Capacitance

COSS

-

600

-

pF

Reverse Transfer Capacitance

CRSS

-

200

-

pF

Thermal Resistance Junction to Case

RθJC

-

1.14

oC/W

Thermal Resistance Junction to Ambient

RθJA

--

80

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 45A

-

1.5

V

Diode Reverse Recovery Time

trr

ISD = 45A, dISD/dt = 100A/µs

-

125

ns

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current

Capability Curve (Figure 5).

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