Z0405ME1AA2 datasheet(3/8 Pages) STMICROELECTRONICS

Part #	Z0405ME1AA2

Description	4A TRIACS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Z04

Characteristics

3/8

Figure 1.

Maximum power dissipation

versus RMS on-state current

(full cycle)

Figure 2.

RMS on-state current versus

ambient temperature (full cycle)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

1

2

3

4

5

6

7

P(W)

I

(A)

T(RMS)

0

25

50

75

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

I

(A)

T(RMS)

R

= 100°C/W

th(j-a)

R=

th(j-a)

Rth(j-l)

T

(°C)

amb

Figure 3.

Relative variation of thermal

impedance versus pulse

duration

Figure 4.

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

1E-3

1E-2

1E-1

1E+0

K=[Z

/R

th(j-a)

th(j-a)]

t (s)

p

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

I, I , I [T ] /

GTHL

j

I

, I , I [T =25°C]

GTHL

j

T (°C)

j

IGT

IH &IL

Figure 5.

Surge peak on-state current

versus number of cycles

Figure 6.

Non-repetitive surge peak on-state

current for a sinusoidal pulse with

width tp < 10 ms and corresponding

value of I2t

1

10

100

1000

0

5

10

15

20

25

One cycle

t=20ms

I

(A)

TSM

Number of cycles

Non repetitive

T initial = 25°C

j

Repetitive

T

= 25°C

amb

0.01

0.10

1.00

10.00

1

10

100

500

t (ms)

p

I

(A), I t (A s)

TSM

22

It

2

dI/dt limitation:

20A/µs

T initial = 25°C

j

ITSM

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