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HBAT-540C-BLKG Datasheet(PDF) 7 Page - AVAGO TECHNOLOGIES LIMITED |
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HBAT-540C-BLKG Datasheet(HTML) 7 Page - AVAGO TECHNOLOGIES LIMITED |
7 / 8 page 7 Figure 7. Forward Current vs. Forward Voltage at 25°C. Becausetheautomatic,pick-and-placeequipmentused toassembletheseproductsselectsdicefromadjacent sitesonthewafer,thetwodiodeswhichgointotheHBAT- 540orHBAT-540C(seriespair)arecloselymatched— withouttheaddedexpenseoftestingandbinning. Current Handling in Clipping/Clamping Circuits Thepurposeofaclipping/clampingdiodeistohandle high currents, protecting delicate circuits downstream of the diode. Current handling capacity is determined bytwosetsofcharacteristics,thoseofthechipordevice itselfandthoseofthepackageintowhichitismounted. Maximum reliability is obtained in a Schottky diode when the steady state junction temperature is main- tainedatorbelow150°C,althoughbriefexcursionsto higherjunctiontemperaturescanbetoleratedwithno significant impact upon mean-time-to-failure, MTTF. In ordertocomputethejunctiontemperature,Equations (1)and(3)belowmustbesimultaneouslysolved. Figure 7. Forward Current vs. Forward Voltage at 25 °C. VF – FORWARD VOLTAGE (V) .01 10 1 .1 300 100 0 0.1 0.3 0.2 0.5 0.4 0.6 HSMS-270x HBAT-540x current limiting pull-down (or pull-up) long cross-site cable noisy data-spikes Vs 0V voltage limited to Vs + Vd 0V – Vd Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit. Consider the circuit shown in Figure 8, in which two Schottkydiodesareusedtoprotectacircuitfromnoise spikesonastreamofdigitaldata.Theabilityofthediodes tolimitthevoltagespikesisrelatedtotheirabilitytosink theassociatedcurrentspikes.Theimportanceofcurrent handlingcapacityisshowninFigure9,wheretheforward voltagegeneratedbyaforwardcurrentiscomparedin twodiodes.ThefirstisaconventionalSchottkydiodeof thetypegenerallyusedinRFcircuits,withanRSof7.7Ω. ThesecondisaSchottkydiodeofidenticalcharacteris- tics,savetheRSof1.0Ω.Fortheconventionaldiode,the relativelyhighvalueofRScausesthevoltageacrossthe diode’sterminalstoriseascurrentincreases.Thepower dissipatedinthediodeheatsthejunction,causingRSto climb,givingrisetoarunawaythermalcondition.Inthe seconddiodewithlowRS,suchheatingdoesnottake placeandthevoltageacrossthediodeterminalsismain- tainedatalowlimitevenathighvaluesofcurrent. Figure 9. Comparison of Two Diodes. 0 0.1 0.2 0.3 0.5 0.4 IF – FORWARD CURRENT (mA) 0 3 2 1 6 4 5 Rs = 7.7 Ω Rs = 1.0 Ω IF = IS e –1 11600 (VF – IFRS) nTJ (1) IS = I0 e TJ 298 2 n 1 TJ 1 298 –4060 – (2) TJ = VFIFθJC + TA (3) where: IF=forwardcurrent IS=saturationcurrent VF=forwardvoltage RS=seriesresistance TJ=junctiontemperature IO=saturationcurrentat5°C n=diodeidealityfactor θJC=thermalresistancefromjunctiontocase (diodelead) =θpackage+θchip TA=ambient(diodelead)temperature Equation(1)describestheforwardV-IcurveofaSchottky diode.Equation()providesthevalueforthediode’ssat- urationcurrent,whichvalueispluggedinto(1).Equation (3)givesthevalueofjunctiontemperatureasafunction of power dissipated in the diode and ambient (lead) temperature. Figure 9. Comparison of Two Diodes. |
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