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HSMS-282K Datasheet(PDF) 5 Page - AVAGO TECHNOLOGIES LIMITED |
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HSMS-282K Datasheet(HTML) 5 Page - AVAGO TECHNOLOGIES LIMITED |
5 / 15 page 5 Applications Information Product Selection Avago’s family of surface mount Schottky diodes provide unique solutions to many design problems. Each is opti‑ mized for certain applications. The first step in choosing the right product is to select the diode type. All of the products in the HSMS‑282x fam‑ ily use the same diode chip–they differ only in package configuration. The same is true of the HSMS‑280x, ‑281x, 285x, ‑286x and ‑270x families. Each family has a different set of characteristics, which can be compared most easily by consulting the SPICE parameters given on each data sheet. The HSMS‑282x family has been optimized for use in RF applications, such as • DC biased small signal detectors to 1.5 GHz. • Biased or unbiased large signal detectors (AGC or power monitors) to 4 GHz. • Mixers and frequencymultipliers to 6 GHz. TheotherfeatureoftheHSMS‑282xfamilyisitsunit‑to‑unit and lot‑to‑lot consistency. The silicon chip used in this series has been designed to use the fewest possible pro‑ cessing steps to minimize variations in diode characteris‑ tics. Statistical data on the consistency of this product, in terms of SPICE parameters, is available from Avago. For those applications requiring very high breakdown voltage, use the HSMS‑280x family of diodes. Turn to the HSMS‑281x when you need very low flicker noise. The HSMS‑285x is a family of zero bias detector diodes for small signal applications. For high frequency detector or mixer applications, use the HSMS‑286x family. The HSMS‑270x is a series of specialty diodes for ultra high speed clipping and clamping in digital circuits. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal‑semiconductor barrier formed by de‑ position of a metal layer on a semiconductor. The most common of several different types, the passivated diode, is shown in Figure 10, along with its equivalent circuit. R S is the parasitic series resistance of the diode, the sum of the bondwire and leadframe resistance, the resistance of the bulk layer of silicon, etc. RF energy coupled into R S is lost as heat—it does not contribute to the rectified out‑ put of the diode. C J is parasitic junction capacitance of the diode, controlled by the thick‑ness of the epitaxial layer and the diameter of the Schottky contact. R j is the junc‑ tion resistance of the diode, a function of the total current flowing through it. 8.33 X 10 -5 nT R j = –––––––––––– = R V – R s I S + I b 0.026 ≈ ––––– at 25 °C I S + I b V - IR S I = I S (e ––––– – 1) 0.026 where n = ideality factor (see table of SPICE parameters) T = temperature in °K I S = saturation current (see table of SPICE parameters) I b = externally applied bias current in amps R v = sum of junction and series resistance, the slope of the V‑I curve I S is a function of diode barrier height, and can range from picoamps for high barrier diodes to as much as 5 µA for very low barrier diodes. The Height of the Schottky Barrier The current‑voltage characteristic of a Schottky barrier diode at room temperature is described by the following equation: 8.33 X 10 -5 nT R j = –––––––––––– = R V – R s I S + I b 0.026 ≈ ––––– at 25 °C I S + I b V - IR S I = I S (e ––––– – 1) 0.026 On a semi‑log plot (as shown in the Avago catalog) the current graph will be a straight line with inverse slope 2.3 X 0.026 = 0.060 volts per cycle (until the effect of R S is seen in a curve that droops at high current). All Schottky diode curves have the same slope, but not necessarily the same value of current for a given voltage. This is determined by the saturation current, I S, and is related to the barrier height of the diode. Through the choice of p‑type or n‑type silicon, and the selection of metal, one can tailor the characteristics of a Schottky diode. Barrier height will be altered, and at the same time CJ and RS will be changed. In general, very low barrier height diodes (with high values of IS, suitable for zero bias applications) are realized on p‑type silicon. Such diodes suffer from higher values of RS than do the n‑type. HSMS-285A/6A fig 9 RS Rj Cj METAL SCHOTTKY JUNCTION PASSIVATION PASSIVATION N-TYPE OR P-TYPE EPI LAYER N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 10. Schottky Diode Chip. |
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