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AWT803-S Datasheet(PDF) 4 Page - Seoul Semiconductor |
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AWT803-S Datasheet(HTML) 4 Page - Seoul Semiconductor |
4 / 14 page Rev. 01 Rev. 01 April 2008 April 2008 www.ZLED.com www.ZLED.com 2. Absolute maximum ratings*1 ºC -40 ~ +100 T stg Storage Temperature ºC -40 ~ +100 T opr Operating Temperature V 5 V R Reverse Voltage mA 90 I FM *2 Peak Forward Current mA 30 I F Forward Current mW 111 P d Power Dissipation Unit Value Symbol Parameter *1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. *2 I FM was measured at TW ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio. 3. Electro-Optical characteristics deg. - 115 - I F =20mA 2 θ ½ Viewing Angle *2 KV - - 1 1.5kΩ ; 100pF ESD ( HBM ) mcd 2,100 1,500 1,100 I F =20mA I V Luminous Intensity*1 µA 10 - - V R=5V I R Reverse Current V 3.7 3.3 2.7 I F =20mA V F Forward Voltage Unit Max Typ Min Condition Symbol Parameter *1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10% *2. 2 θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. [Note] All measurements were made under the standardized environment of SSC. |
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