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Z0110MA5AA4 Datasheet(PDF) 5 Page - STMicroelectronics |
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Z0110MA5AA4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 8 page Z01 Characteristics Doc ID 7474 Rev 10 5/12 Figure 13. Relative variation of static dV/dt immunity versus junction temperature (gate open) Figure 9. On-state characteristics (maximum values) (ITM = f(VTM) Figure 10. Relative variation of critical rate of decrease of main current versus (dV/dt)c I (A) TM 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 10.0 V (V) TM T = max. j Tj T = 25°C j T =max. j V =0.95 V R =400 m t0 d Ω 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Z0103 Z0107 Z0110 Z0109 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dV/dt)c (V/µs) Figure 11. Relative variation of critical rate of decrease of main current (dI/dt) versus junction temperature Figure 12. SOT-223 and SMBflat-3L thermal resistance junction to ambient versus copper surface under case 0 25 50 75 100 125 0 1 2 3 4 5 6 (dI/dt)c [T ] / Specified] j (dI/dt)c [Tj T (°C) j 50 60 70 80 90 100 110 120 130 140 SOT223 150 160 170 0 12 3 4 5 R (°C/W) th(j-a) S(cm²) CU SMBF3L 0 1 2 3 4 5 6 25 50 75 100 125 Tj(°C) dV/dt [T j]/ dV/dt[T j=125 °C] V D=VR=402V |
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