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RB751V-40 Datasheet(PDF) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
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RB751V-40 Datasheet(HTML) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
1 / 4 page Nov 2008 Release, Revision C Page 1 TAK CHEONG ® SEMICONDUCTOR 200mW SOD-323 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 200 mW TSTG Storage Temperature Range -55 to +125 °C TJ Operating Junction Temperature +125 °C VRRM Repetitive Peak Reverse Voltage 40 V VR Reverse Voltage 30 V IF Forward Current 30 mA IFSM Non-Repetitive Peak Forward Current 500 mA These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Low Forward Voltage Drop Flat Lead SOD-323 Small Outline Plastic Package Surface Device Type Mounting RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Band Indicates Cathode DEVICE MARKING CODES: Device Type Device Marking RB751V-40 B5 Electrical Characteristics TA = 25°C unless otherwise noted Limits Symbol Parameter Test Condition Min Max Unit BV Breakdown Voltage IR=10µA 30 Volts IR Reverse Leakage Current VR=30V 0.5 µA VF Forward Voltage TCBAT42WS, IF=1mA 0.37 Volts |
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