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TN0604WG Datasheet(PDF) 2 Page - Supertex, Inc |
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TN0604WG Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja I DR*IDRM @ T C = 25°C °C/W °C/W TO-92 700mA 4.6A 1W 125 170 700mA 4.6A SOW-20 Refer to Enhancement Mode MOSFET Arrays Section. * I D (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source Breakdown Voltage 40 V GS(th) Gate Threshold Voltage 0.6 1.6 V V GS = VDS, ID = 1.0mA ∆VGS(th) Change in V GS(th) with Temperature -3.8 -4.5 mV/°CVGS = VDS, ID = 2.5mA IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V I DSS Zero Gate Voltage Drain Current 10 µAVGS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating T A = 125°C I D(ON) ON-State Drain Current 1.5 2.1 V GS = 5V, VDS = 20V 4.0 7.0 VGS = 10V, VDS = 20V R DS(ON) TO-92/SOW-20 1.0 1.6 Ω V GS = 5V, ID = 0.75A TO-92 0.6 0.75 Ω VGS = 10V, ID = 1.5A SOW - 20 1.0 ∆RDS(ON) Change in RDS(ON) with Temperature 0.5 0.75 %/°CVGS = 10V, ID = 1.5A GFS Forward Transconductance 0.5 0.8 VDS = 20V, ID = 1.5A C ISS Input Capacitance 140 190 COSS Common Source Output Capacitance 75 110 pF CRSS Reverse Transfer Capacitance 25 50 t d(ON) Turn-ON Delay Time 10 tr Rise Time 6.0 td(OFF) Turn-OFF Delay Time 25 t f Fall Time 20 VSD Diode Forward Voltage Drop 1.2 1.8 V VGS = 0V, ISD = 1.5A trr Reverse Recovery Time 300 ns VGS = 0V, ISD = 1A Notes: 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2: All A.C. parameters sample tested. VV GS = 0V, ID = 2.0mA A Electrical Characteristics (@ 25°C unless otherwise specified) 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD R gen 0V 0V Switching Waveforms and Test Circuit V GS = 0V, VDS = 20V f = 1 MHz V DD = 20V ns ID = 0.5A RGEN = 25Ω TN0604 Static Drain-to-Source ON-State Resistance |
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