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TN0606N3 Datasheet(PDF) 2 Page - Supertex, Inc |
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TN0606N3 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 7-52 Package I D (continuous)* I D (pulsed) Power Dissipation θ jc θ ja I DR*IDRM @ TC = 25°C °C/W °C/W TO-92 0.8A 3.2A 1W 125 170 0.8A 3.2A TO-220 3.0A 4.1A 45W 2.7 70 3.0A 4.1A * I D (continuous) is limited by max rated Tj. TN0606/TN0610 Thermal Characteristics 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD R gen 0V 0V Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BV DSS TN0610 100 TN0606 60 V GS(th) Gate Threshold Voltage 0.6 2.0 V V GS = VDS, ID = 1mA ∆V GS(th) Change in V GS(th) with Temperature -4.5 mV/ °CV GS = VDS, ID = 1mA IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V I DSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating T A = 125°C (note 2) I D(ON) ON-State Drain Current 1.2 2.0 V GS = 5V, VDS = 25V 3.0 6.7 VGS = 10V, VDS = 25V 15 V GS = 3V, ID = 0.25A R DS(ON) 1.5 2.0 V GS = 5V, ID = 0.75A 1.0 1.5 VGS = 10V, ID = 0.75A ∆R DS(ON) Change in R DS(ON) with Temperature 0.75 %/ °CV GS = 10V, ID = 0.75A G FS Forward Transconductance 0.4 0.5 V DS = 25V, ID = 1.0A CISS Input Capacitance 100 150 C OSS Common Source Output Capacitance 50 85 C RSS Reverse Transfer Capacitance 10 35 td(ON) Turn-ON Delay Time 6 t r Rise Time 14 t d(OFF) Turn-OFF Delay Time 16 tf Fall Time 16 V SD Diode Forward Voltage Drop 0.8 1.8 V V GS = 0V, ISD = 1.5A t rr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1.5A Notes: 1. All D.C. parameters 100% tested at 25 °C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. A VVGS = 0V, ID = 1mA Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = 25V f = 1 MHz pF Electrical Characteristics (@ 25 °C unless otherwise specified) V DD = 25V ns I D = 1.5A R GEN = 25Ω Ω |
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