7-72

Package

I

I

Power Dissipation

θ

jc

θ

ja

I

@ T

TO-236AB

0.28A

0.8A

0.36W

200

350

0.28A

0.8A

TO-92

0.30A

1.0A

0.74W

125

170

0.30A

1.0A

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

Drain-to-Source Breakdown Voltage

60

V

I

V

GS(th)

Gate Threshold Voltage

0.6

2.0

V

V

∆V

GS(th)

Change in V

-3.8

-5.5

mV/

°CI

I

GSS

Gate Body Leakage

0.1

100

nA

V

I

DSS

Zero Gate Voltage Drain Current

1

µAV

100

µAV

T

I

D(ON)

ON-State Drain Current

0.6

A

V

R

DS(ON)

5.0

Ω

V

2.5

Ω

V

∆R

DS(ON)

Change in R

0.70

1.0

%/

°CV

G

FS

Forward Transconductance

150

400

m

V

C

ISS

Input Capacitance

35

50

C

OSS

Common Source Output Capacitance

17

25

pF

V

C

RSS

Reverse Transfer Capacitance

7

8

t

d(ON)

Turn-ON Delay Time

3

5

Rise Time

5

8

t

d(OFF)

Turn-OFF Delay Time

6

9

t

f

Fall Time

5

8

Diode Forward Voltage Drop

1.2

1.8

V

t

rr

Reverse Recovery Time

400

ns

I

Notes:

1. All D.C. parameters 100% tested at 25

°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

°C unless otherwise specified)

V

ns

I

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Static Drain-to-Source

ON-State Resistance

TN2106