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VN2410L Datasheet(PDF) 2 Page - Supertex, Inc

Part # VN2410L
Description  N-Channel Enhancement-Mode Vertical DMOS FETs
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

VN2410L Datasheet(HTML) 2 Page - Supertex, Inc

  VN2410L Datasheet HTML 1Page - Supertex, Inc VN2410L Datasheet HTML 2Page - Supertex, Inc  
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2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Thermal Characteristics
VN2406/VN2410
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSS
240
V
GS(th)
Gate Threshold Voltage
0.8
2
V
V
GS = VDS, ID = 1mA
IGSS
Gate Body Leakage
100
nA
VGS = 20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
10
VGS = 0V, VDS = 120V
500
µAVGS = 0V, VDS = 120V
TA = 125°C
I
D(ON)
ON-State Drain Current
1.0
A
V
GS = -10V, VDS = 15V
RDS(ON)
All
10
VGS = 2.5V, ID = 0.1A
VN2410
10
VGS = 10V, ID = 0.5A
VN2406
6
V
GS = 10V, ID = 0.5A
∆RDS(ON)
Change in RDS(ON) with Temperature
1.0
1.4
%/°CVGS = 10V, ID = 0.55A
GFS
Forward Transconductance
300
m
VDS = 10V, ID = 0.5A
C
ISS
Input Capacitance
125
COSS
Common Source Output Capacitance
50
pF
C
RSS
Reverse Transfer Capacitance
20
t
d(ON)
Turn-ON Delay Time
8
tr
Rise Time
8
t
d(OFF)
Turn-OFF Delay Time
23
t
f
Fall Time
24
VSD
Diode Forward Voltage Drop
VN2410
1.2
V
VGS = 0V, ISD = 0.19A
VN2406
1.2
V
V
GS = 0V, ISD = 0.8A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VV
GS = 0V, ID = 0.1mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
VGS = 0V, VDS = 25V
f = 1 MHz
Electrical Characteristics (@ 25°C unless otherwise specified)
VDD = 60V
ID = 0.4A
R
GEN = 25Ω
ns
Switching Waveforms and Test Circuit
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
0.9A
5.0A
1.0W
125
170
0.18A
1.7A
* I
D (continuous) is limited by max rated Tj.


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