2

Package

Power Dissipation

TO-243AA

0.2A

0.6A

15

0.2A

0.6A

TO-92

0.16A

0.5A

1W

125

170

0.16A

0.5A

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

600

Gate Threshold Voltage

1.5

V

-5.5

Gate Body Leakage

100

nA

Zero Gate Voltage Drain Current

10

1mA

T

ON-State Drain Current

0.25

A

25

20

1.7

G

FS

Forward Transconductance

50

mV

C

ISS

Input Capacitance

150

C

OSS

Common Source Output Capacitance

50

pF

C

RSS

Reverse Transfer Capacitance

25

t

d(ON)

Turn-ON Delay Time

10

t

r

Rise Time

10

t

d(OFF)

Turn-OFF Delay Time

25

t

f

Fall Time

20

V

SD

Diode Forward Voltage Drop

1.5

V

V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Drain-to-Source

Breakdown Voltage

Static Drain-to-Source

ON-State Resistance

VV

GS

= 0V, I

D

= 2.0mA

ns

V

f = 1.0 MHz

V

I

Ω

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

VN2460