2SB1220 datasheet(1/1 Pages) KEXIN

Part #	2SB1220

Description	Silicon PNP Epitaxial Planar Type

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

1

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1 Emitter

2 Base

3 Collector

Silicon PNP Epitaxial Planar Type

2SB1220

Features

High collector-emitter voltage VCEO

Low noise voltage NV

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-150

V

Collector-emitter voltage

VCEO

-150

V

Emitter-base voltage

VEBO

-5

V

Peak collector current

ICP

-100

mA

Collector current

IC

-50

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter voltage

VCEO

IC = -100 ìA, IB = 0

-150

V

Emitter-base voltage

VEBO

IE =-10 ìA, IC =0

-5

V

Collector-base cutoff current

ICBO

VCB = -100 V, IE =0

-1

ìA

Forward current transfer ratio

hFE

VCE =-5V, IC = -10 mA

130

450

Collector-emitter saturation voltage

VCE(sat) IC =-30 mA, IB =-3mA

-1

V

Transition frequency

fT

VCB =-10 V, IE = 10 mA, f = 200 MHz

200

MHz

Collector output capacitance

Cob

VCB =-10 V, IE = 0,f= 1 MHz

4

pF

Noixe voltage

NV

VCE =-10 V, IC =-1mA, GV =80dB,

Rg = 100KÙ

, Function = FLAT

150

mV

hFE Classification

Marking

Rank

R

S

T

hFE

130

220

185

330

260

450

I

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2SB1220 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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