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1N4448WS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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1N4448WS Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page SMD Type Diodes www.kexin.com.cn 2 1N4448WS Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Reverse Breakdown Voltage (*) V(BR)R IR =2.5 A 75 V IF = 5.0mA 0.62 0.72 IF = 10mA 0.855 IF = 100mA 1.0 IF = 150mA 1.25 VR = 75V 2.5 VR = 75V, Tj = 150 50 VR = 25V, Tj = 150 30 VR = 20V 25 nA Total Capacitance CT VR = 0, f = 1.0MHz 4.0 pF Reverse Recovery Time trr IF =IR = 10mA, Irr =0.1 x IR,RL =100 4.0 ns * Short duration test pulse used to minimize self-heating effect. Forward Voltage (*) VF V Leakage Current (*) IR A Marking Marking T5 |
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