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 KEXIN
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SMD Type Transistors 1 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter www.kexin.com.cn Silicon NPN Triple Diffusion Planar Type 2SD1250 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6V Collector current IC 2 Peak collector current ICP 3 Collector power dissipation 1.3 W TC =25 30 W Junction temperature Tj 150 Storage temperature Tstg -55to+150 PC A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC =500 ìA, IE =0 200 V Collector-emitter voltage (Base open) VCEO IC =5 mA, IB =0 150 V Emitter-base voltage (Collector open) VEBO IE =500 ìA, IC =0 6 V Collector-base cutoff current (Emitter open) ICBO VCB =200 V, IE =0 50 ìA Emitter-base cutoff current (Collector open) IEBO VEB =4V, IC =0 50 ìA VCE =10V, IC = 150 mA 60 240 VCE =10V, IC = 400 mA 50 Base-emitter voltage VBE VCE =10V, IC =400 mA 1.0 V Collector-emitter saturation voltage VCE(sat) IC =500 mA, IB =50mA 1.0 V Transition frequency fT VCE =10V, IC =0.5 A, f = 1MHz 20 MHz Forward current transfer ratio hFE hFE Classification Rank Q P hFE 60 to 140 100 to 240 |
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