MJD45H11 datasheet(2/2 Pages) KEXIN

Part #	MJD45H11

Description	Complementary Power Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter sustaining voltage

VCEo(sus) IC =30mA, IB =0

80

V

Collector cutoff current

ICES

VCE = Rated VCEO,VEB =0

10

ìA

Emitter cutoff current

IEBO

VBE =5V, IC =0

50

ìA

Collector-emitter saturation voltage

VCE(sat) IC =8A, IB =0.4 A

1

V

Base-emitter saturation voltage

VBE(sat) IC =8A, IB = 0.8 A

1.5

V

IC =2A, VCE =1V

60

IC =4A, VCE =1V

40

Collector capacitance

Ccb

VCB = 10 V,ftest = 1 MHz

230

pF

Current-gain-bandwidth product *2

fT

IC =0.5 A,VCE =10V,f =20MHz

40

MHz

Delay and rise times

td +tr

IC =5A, IB1 = 0.5 A

135

ns

Storage time

ts

IC =5A, IB1=IB2 = 0.5 A

500

ns

Fall time

tf

IC =5A, IB1=IB2 = 0.5 A

100

ns

DC current gain

hFE

MJD45H11

Marking

J45H11

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