SMD Type

Transistors

1

www.kexin.com.cn

SOT-223

Unit: mm

-0.1

-0.1

2.9

4.6

-0.2

-0.2

-0.2

-0.3

12

4

3

1 Base

2 Collector

3 Emitter

4 Collector

NPN Silicon Epitaxial Transistor

BSP20A

Features

Available in 12 mm Tape and Reel

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-Emitter Voltage (Open Base)

250

V

Collector-Base Voltage (Open Emitter)

300

V

Emitter-Base Voltage (Open Collector)

5V

Collector Current (DC)

1000

mA

Total Power Dissipation @ TA = 25

*

0.8

Watts

Derate above 25

6.4

mW/

Storage Temperature Range

-65to150

Junction Temperature

150

Thermal Resistance from Junction-to-Ambient

156

/W

Maximum Temperature for Soldering Purposes

260

Time in Solder Bath

10

Sec

* Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

250

V

Collector-Base Cutoff Current

20

nA

Emitter-Base Cutoff Current

10

mA

DC Current Gain *

40

Current-Gain — Bandwidth Product *

70

MHz

Collector-Emitter Saturation Voltage *

0.5

V

Base-Emitter Saturation Voltage *

1.3

V

* Pulse Test: Pulse Width

300 ìs, Duty Cycle = 2.0%

Marking

Marking

SP20A