MJD340 datasheet(1/1 Pages) KEXIN

Part #	MJD340

Description	NPN Epitaxial Silicon Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

1

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

www.kexin.com.cn

NPN Epitaxial Silicon Transistor

MJD340

Features

Load Formed for Surface Mount Application

Straight Lead

Absolute Maximum Ratings Ta = 25

unless otherwise noted

Parameter

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

3V

Collector Current (DC)

IC

0.5

A

Collector Current (Pulse)

ICP

0.75

A

Collector Dissipation (TC = 25

)

15

A

Collector Dissipation (Ta = 25

)

1.56

W

Junction Temperature

TJ

150

W

Storage Temperature

TSTG

-65to150

PC

Electrical Characteristics Ta = 25

unless otherwise noted

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-Emitter Sustaining Voltage *

VCEO(sus)

IC =1mA, IB = 0

300

V

Collector Cut-off Current

ICEO

VCB = 300V, IE =0

0.1

mA

Emitter Cut-off Current

IEBO

VEB =3V, IC =0

0.1

mA

DC Current Gain *

hFE

VCE = 10V, IC = 50mA

30

240

*Pulse Test: PW

300ìs, Duty Cycle

2%

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