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BZT55C2V7 Datasheet(PDF) 3 Page - TEMIC Semiconductors |
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BZT55C2V7 Datasheet(HTML) 3 Page - TEMIC Semiconductors |
3 / 6 page TELEFUNKEN Semiconductors BZT55C... 3 Rev. A1: 12.12.1994 Typical Characteristics (Tj = 25 _C unless otherwise specified) 0 40 80 120 160 0 100 300 400 500 600 Tamb – Ambient Temperature ( °C ) 200 95 9602 200 Figure 1 : Total Power Dissipation vs. Ambient Temperature –60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 Tj – Junction Temperature ( °C ) 240 95 9599 VZtn=VZt/VZ(25°C) TKVZ=10 10–4/K 8 10–4/K –4 10–4/K 6 10–4/K 4 10–4/K 2 10–4/K –2 10–4/K 0 Figure 3 : Typical Change of Working Voltage vs. Junction Temperature 0 5 10 15 0 50 100 150 200 VZ – Z-Voltage ( V ) 25 95 9601 20 Tj =25°C VR =2V Figure 5 : Diode Capacitance vs. Z–Voltage 0 5 10 15 20 1 10 100 1000 VZ – Z-Voltage ( V ) 25 95 9598 IZ=5mA Tj =25°C Figure 2 : Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 010 20 30 –5 0 5 10 15 VZ – Z-Voltage ( V ) 50 95 9600 40 IZ=5mA Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 VF – Forward Voltage ( V ) Tj =25°C Figure 6 : Forward Current vs. Forward Voltage |
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