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DG200ABK Datasheet(PDF) 5 Page - TEMIC Semiconductors |
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DG200ABK Datasheet(HTML) 5 Page - TEMIC Semiconductors |
5 / 5 page DG200A Siliconix S-52880—Rev. B, 28-Apr-97 5 Test Circuits Figure 2. Switching Time Figure 3. Charge Injection CL 1000 pF Vg 3 V D V+ V– Rg –15 V GND IN S VO +15 V VO DVO INX ON ON OFF DVO = measured voltage error due to charge injection The charge injection in coulombs is DQ = CL x DVO VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. 50% 0 V 3 V tOFF tON VO VS tr <20 ns tf <20 ns Logic Input Switch Input Switch Output 90% CL 35 pF RL 1 k W VO = VS RL + rDS(on) RL VS = +5 V VO V– V+ IN S D 3 V –15 V GND +15 V Figure 4. Off Isolation S IN RL D Rg = 50 W VS VO 5 V Off Isolation = 20 log VS VO V+ –15 V GND V– C C +15 V IN1 0V VO +15 V –15 V GND RL V+ V– NC XTALK = 20 log C VS C VO 0V 50 W VS S1 IN2 S2 Rg = 50 W D1 D2 C = RF bypass Figure 5. Channel-to-Channel Crosstalk |
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