KI5441DC datasheet(2/2 Pages) KEXIN

Part #	KI5441DC

Description	P-Channel 2.5-V (G-S) MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

SMD Type

IC

KI5441DC

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = -250

A

-0.6

-1.0

V

Gate-Body Leakage

IGSS

VDS =0V, VGS =

12 V

100

nA

VDS = -20V, VGS =0V

-1

A

VDS = -20V, VGS =0V, TJ =85

-5

A

On-State Drain Current*

ID(on)

VDS

-5V, VGS =-4.5V

-20

A

VGS =-4.5V, ID = -3.9A

0.046

0.055

VGS =-3.6V, ID = -3.7A

0.05

0.06

VGS =-2.5V, ID = -3.1A

0.07

0.083

Forward Transconductance*

gfs

VDS =-10 V, ID = -3.9A

12

S

Schottky Diode Forward Voltage*

VSD

IS =-1.1A, VGS = 0 V

-0.8

-1.2

V

Total Gate Charge

Qg

11

22

nC

Gate-Source Charge

Qgs

VDS = -10V, VGS =-4.5V, ID = -3.9 A

3.0

nC

Gate-Drain Charge

Qgd

2.5

nC

Turn-On Delay Time

td(on)

20

30

ns

Rise Time

tr

VDD =-10 V, RL =10

35

55

ns

Turn-Off Delay Time

td(off)

ID =-1A, VGEN = -4.5V, RG =6

65

100

ns

Fall Time

tf

45

70

ns

Source-Drain Reverse Recovery Time

trr

IF = -1.1 A, di/dt = 100 A/

s

30

60

ns

* Pulse test; pulse width

300

s, duty cycle

2%.

IDSS

Zero Gate Voltage Drain Current

rDS(on)

Drain-Source On-State Resistance*

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