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2SK3636 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3636 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Gate-drain surrender voltage VDSS ID =1mA, VGS =0 800 V Drain-source cutoff current IDSS VDS =640 V, VGS =0 100 ìA Gate-source cutoff currentt IGSS VGS = 30 V, VDS =0 1 ìA Gate threshold voltage Vth VDS =25V, ID =1mA 2.0 5.0 V Forward transfer admittance * Yfs VDS =25V, ID =2mA 1.5 2.4 V Drain-source on resistance * RDS(on) VGS =10V, ID =2mA 3.2 4.0 Ù Diode forward voltage * VDSF IDR =3A, VGS =0 -1.6 V Short-circuit forward transfer capacitance Ciss VDS =10V, VGS = 0,f= 1 MHz 730 pF Short-circuit output capacitance Coss 90 pF Reverse transfer capacitance Crss 40 pF Turn-on delay time td(on) 35 ns Rise time tr 60 ns Fall time tf 50 ns Turn-off delay time td(off) 160 ns Thermal resistance (ch-c) Rth(ch-c) 3.6 /W Thermal resistance (ch-a) Rth(ch-a) 62.5 /W * Pulse measurement VDD =200 V, ID =2A, RL =100 Ù,VGS =10V 2SK3636 |
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