BZT55C22 datasheet(1/6 Pages) TEMIC

Part #	BZT55C22

Description	Silicon Epitaxial Planar Z-Diodes

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Manufacturer	TEMIC [TEMIC Semiconductors]

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TELEFUNKEN Semiconductors

BZT55C...

1

Rev. A1: 12.12.1994

Silicon Epitaxial Planar Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Very high stability

D Low noise

D Available with tighter tolerances

Applications

Voltage stabilization

94 9373

Absolute Maximum Ratings

Tj = 25

_C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Power dissipation

RthJA

x300K/W

PV

500

mW

Z–current

IZ

PV/VZ

mA

Junction temperature

Tj

175

°C

Storage temperature range

Tstg

–65...+175

°C

Maximum Thermal Resistance

Tj = 25

_C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

on PC board 50mmx50mmx1.6mm

RthJA

500

K/W

Characteristics

Tj = 25

_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

IF=200mA

VF

1.5

V

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