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2SD965 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SD965
Description  Silicon NPN epitaxial planar type
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD965 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
Silicon NPN epitaxial planar type
2SD965
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with
the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power dissipation
PC
0.75
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter voltage
VCEO
IC =1mA,IB =0
20
V
Emitter-base voltage
VEBO
IE =10ìA, IC =0
7
V
Collector-base cutoff current
ICBO
VCB =10V,IE =0
0.1
A
Collector-emitter cutoff current
ICEO
VCE =10V,IB =0
1
A
Emitter-base cutoff current
IEBO
VEB =7V, IC =0
0.1
A
VCE =2V, IC = 0.5 A
230
600
VCE =2V, IC = 2A
150
Collector-emitter saturation voltage
VCE(sat)
IC =3A, IB =0.1 A
1
V
Collector output capacitance
Cob
VCB =20V,IE = 0, f = 1 MHz
50
pF
Transition frequency
fT
VCB =6V, IE = -50 mA, f = 200 MHz
150
MHz
DC current gain
hFE
hFE Classification
Marking
Q
R
hFE
230
380
340
600


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