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BZT55C62 Datasheet(PDF) 1 Page - TEMIC Semiconductors |
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BZT55C62 Datasheet(HTML) 1 Page - TEMIC Semiconductors |
1 / 6 page TELEFUNKEN Semiconductors BZT55C... 1 Rev. A1: 12.12.1994 Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications Voltage stabilization 94 9373 Absolute Maximum Ratings Tj = 25 _C Parameter Test Conditions Type Symbol Value Unit Power dissipation RthJA x300K/W PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25 _C Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mmx50mmx1.6mm RthJA 500 K/W Characteristics Tj = 25 _C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.5 V |
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