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2SB736A Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SB736A
Description  PNP Silicon Epitaxial Transistor
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB736A Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SB736A Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
PNP Silicon Epitaxial Transistor
2SB736A
Features
Micro package.
Complementary to 2SD780A.
High DC Current Gain: hFE = 200 TYP. (VCE =-1.0V, IC =-50 mA)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-80
V
Collector to emitter voltage
VCEO
-80
V
Emitter to base voltage
VEBO
-5.0
V
Collector current (DC)
IC
-300
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =-50 V, IE = 0
-100
nA
Emitter cutoff current
IEBO
VEB =-5.0V, IC = 0
-100
nA
DC current gain *
hFE
VCE =-1.0V, IC = -50 mA
110
400
Base to emitter voltage *
VBE
VCE =6.0 V, IC = -10 mA
-600
-660
-700
mV
Collector saturation voltage *
VCE(sat) IC = -300 mA, IB = -30 mA
-0.35
-0.6
V
Output capacitance
Cob
VCB =-6.0V, IE =0, f =1.0 MHz
13
pF
Gain bandwidth product
fT
VCE =-6.0V, IE = 10 mA
100
MHz
* Pulsed: PW
350 µs, duty cycle
2%
hFE Classification
Marking
B51
B52
B53
B54
B55
hFE
110
180
135
220
170
270
200
320
250
400


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