BC860C datasheet(2/2 Pages) KEXIN

Part #	BC860C

Description	PNP General Purpose Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

SMD Type

Transistors

BC859,BC860

Electrical Characteristics Ta = 25

Symbol

Testconditons

Min

Typ

Max

Unit

ICBO

VCB =-30 V, IE = 0

-1

-15

nA

ICBO

VCB =-30 V, IE =0, Tj = 150

-4

ìA

IEBO

VEB =-5V, IC = 0

-100

nA

BC859B,BC860B

220

475

BC859C,BC860C

420

800

IC =-10 mA; IB = -0.5 mA

-75

-300

mV

IC = -100 mA; IB = -5 mA;

-250

-650

mV

IC =-10 mA; IB = -0.5 mA

-700

mV

IC = -100 mA; IB = -5 mA;

-850

mV

IC =-2mA; VCE = -5 V

-600

-650

-750

mV

IC =-10 mA; VCE = -5 V

-820

mV

CC

VCB =-10 V; IE =Ie=0;f = 1MHz

4.5

pF

Ce

IC =Ic = 0; VEB = -500 mV; f = 1 MHz

10

fT

VCE =-5V; IC = -10 mA;f = 100 MHz

100

MHz

NF

IC = -200 µA; VCE =-5V;RS =2kÙ;

f = 1 kHz;B = 200 Hz

4dB

*1. VBEsat decreases by about -1.7 mV/K with increasing temperature.

*2. VBE decreases by about -2 mV/K with increasing temperature.

IC =-2mA; VCE =-5V

hFE

Emitter capacitance

VBE(sat)

VBE

Noise figure

Collector cutoff current

Collector capacitance

Emitter cutoff current

Base-emitter saturation voltage *1

Base-emitter voltage *2

Transition frequency

Parameter

Collector-emitter saturation voltage

VCE(sat)

DC current gain

hFE Classification

TYPE

BC859B

BC859C

Marking

4B

4C

TYPE

BC860B

BC860C

Marking

4F

4G

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