FCX1151A datasheet(2/2 Pages) KEXIN

Part #	FCX1151A

Description	PNP Silicon Power Switching Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO IC=-100ìA

-45

V

Collector-emitter breakdown voltage *

V(BR)CEO IC=-10mA

-40

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100ìA

-5

V

Collector cut-off current

ICBO

VCB=-36V

-0.3

-100

nA

Collector Emitter Cut-Off Current

ICES

VCE=-32V

-0.3

-100

nA

Emitter Cut-Off Current

IEBO

VEB=-4V

-0.3

-100

nA

Collector-emitter saturation voltage *

VCE(sat)

IC=-0.1A, IB=-1mA

IC=-0.5A, IB=-5mA

IC=-1A, IB=-20mA

IC=-3A, IB=-250mA

-60

-120

-140

-200

-90

-180

-220

-300

mV

Base-emitter saturation voltage *

VBE(sat) IC=-3A, IB=-250mA

-985

-1050

mV

Base-emitter ON voltage *

VBE(on)

IC=-3A, VCE=-2V

-850

-950

mV

Static Forward Current Transfer Ratio *

hFE

IC=-10mA,VCE=-2V

IC=-0.5A,VCE=-2V

IC=-2A,VCE=-2V

IC=-3A,VCE=-2V

IC=-5A,VCE=-2V

270

250

180

100

450

400

300

190

45

800

Transitional frequency

fT

IC=-50mA, VCE=-10V, f=50MHz

145

MHz

Output capacitance

Cobo

VCB=-10V, f=1MHz

40

pF

Turn-on time

t(on)

IC=-2A, VCC=-30V

170

ns

Turn-off time

t(off)

IB1=IB2=-20mA

460

ns

* Pulse test: tp = 300 ìs; d

0.02.

Marking

151

FCX1151A

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