KI5402DC datasheet(2/2 Pages) KEXIN

Part #	KI5402DC

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

SMD Type

IC

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = 250 ìA

1.0

V

Gate-Body Leakage

IGSS

VDS =0V, VGS =

20 V

100

nA

VDS =24V, VGS =0V

1

A

VDS =24V, VGS =0V, TJ =55

5

A

On-State Drain Current*

ID(on)

VDS

5V, VGS =10V

20

A

VGS =10V, ID = 4.9 A

0.030

0.035

VGS =4.5 V, ID = 3.9 A

0.045

0.055

Forward Transconductance*

gfs

VDS =10V, ID =4.9 A

15

S

Schottky Diode Forward Voltage*

VSD

IS =1.1 A, VGS =0V

0.8

1.2

V

Total Gate Charge

Qg

13

20

nC

Gate-Source Charge

Qgs

VDS =15V, VGS =10V, ID = 4.9 A

1.3

nC

Gate-Drain Charge

Qgd

3.1

nC

Turn-On Delay Time

td(on)

10

15

ns

Rise Time

tr

VDD =15V, RL = 15 Ù

10

15

ns

Turn-Off Delay Time

td(off)

ID =1A, VGEN =10V, RG =6

25

40

ns

Fall Time

tf

10

15

ns

Source-Drain Reverse Recovery Time

trr

IF = 1.1 A, di/dt = 100 A/

s

30

60

ns

* Pulse test; pulse width

300

s, duty cycle

2%.

IDSS

Zero Gate Voltage Drain Current

rDS(on)

Drain-Source On-State Resistance*

KI5402DC

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KI5402DC Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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