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KTD2017 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. KTD2017
Description  N-Channel Silicon MOSFET
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
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 1 page
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
IC
TSSOP-8
Unit: mm
1: Drain1
2 : Source1
3 : Source1
4: Gate1
5: Gate2
6 : Source2
7 : Source2
8: Drain2
N-Channel Silicon MOSFET
KTD2017
Features
Low ON resistance.
2.5V drive.
Mounting height 1.1mm
Composite type, facilitating high-density mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
10
V
Drain Current(DC)
ID
5A
Drain Current (pulse)
(PW
10ìs)
IDP
20
A
Allowable Power Dissipation
PD
0.8
W
Total Dissipation
PT
1.3
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150




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