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KTD2017 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. KTD2017
Description  N-Channel Silicon MOSFET
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
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2
SMD Type
IC
SMD Type
IC
Switching Time Test Circuit
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain-to Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
20
V
Drain Cut-off Current
IDSS
VDS =20V, VGS =0V
1
A
Gate Leakage Current
IGSS
VGS =
8V, VDS =0V
10
A
Gate Cut-off Voltage
VGS(off)
VDS =10V, ID =1mA
0.4
1.3
V
Forward Transfer Admittance
Yfs
VDS =10V, ID = 5 A
11.2
16
S
RDS(on)1 VGS =4V, ID =4A
17
23
m
RDS(on)2 VGS =2.5 V, ID =2A
20
29
m
Input Capacitance
Ciss
VDS = 10 V,f = 1 MHz
1500
pF
Output Capacitance
Coss
VDS = 10 V,f = 1 MHz
350
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V,f = 1 MHz
230
pF
Turn-on Delay Time
td(on)
19
ns
Rise Time
tr
190
ns
Turn-off Delay Time
td(off)
90
ns
Fall Time
tf
160
ns
Total Gate Charge
Qg
42
nC
Gate-Source Charge
Qgs
4nC
Gate-Drain Charge
Qgd
8nC
Diode Forward Voltage
VSD
IF =5A, VGS =0V
0.8
1.2
V
Static Drain to Source On-state Resistance
See Specified Test Circuit
VDS=10V,VGS =10V,ID =5A
KTD2017




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