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KI2302DS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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KI2302DS Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page 2 SMD Type Diodes SMD Type Transistors www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS =0V, ID =10ìA 20 Gate-Threshold Voltage VGS(th) VDS =VGS,ID =50ìA 0.65 Gate-Body Leakage IGSS VDS =0V, VGS = 8V 100 nA VDS =20V, VGS =0V 1 VDS =20V, VGS =0V, TJ =55 10 VDS 5V, VGS =4.5 V 6 VDS 5V, VGS =2.5 V 4 VGS =4.5 V, ID = 3.6 A 0.07 0.085 VGS =2.5 V, ID = 3.1 A 0.085 0.115 Forward Transconductance * gfs VDS =5V, ID =3.6 A 10 S Diode Forward Voltage VSD IS =1.6 A, VGS = 0 V 0.76 1.2 V Total Gate Charge Qg 5.4 10 Gate-Source Charge Qgs 0.65 Gate-Drain Charge Qgd 1.60 Input Capacitance Ciss 340 Output Capacitance Coss 115 Reverse Transfer Capacitance Crss 33 Turn-On Delay Time td(on) 12 25 Rise Time tr 36 60 Turn-Off Delay Time td(off) 34 60 Fall-Time tf 10 25 *Pulse test: PW 300 ìs duty cycle 2%.. nC Drain-Source On-Resistance * ns VDD=10V,RL=5.5 Ù,ID=3.6A,VGEN=4.5V,RG=6Ù Zero Gate Voltage Drain Current IDSS On-State Drain Current * ID(on) rDS(on) VDS=10V,VGS=0V,f=1MHz pF VDS=10V,VGS=4.5V,ID=3.6A V ìA A Ù Marking Marking A2 KI2302DS |
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