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KTD1003 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. KTD1003
Description  Load Switching Applications
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
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www.kexin.com.cn
2
SMD Type
IC
SMD Type
IC
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS =0V, ID = -250
A
-12
V
Breakdown Voltage Temp. Coefficient
V(BR)DSS
/
TJ ID = -1mA,Reference to 25
-0.006
V/
VGS =-4.5V, ID = -4.3A*1
0.040
VGS =-2.5V, ID = -3.4A*1
0.058
VGS =-1.8V, ID = -2.2A*1
0.087
Gate Threshold Voltage
VGS(th)
VDS =VGS,ID = -250
A
-0.4
-0.9
V
Forward Transconductance
gfs
VDS = -10V, ID = -4.3A*1
13
S
VDS =-9.6V, VGS =0V
-1.0
VDS =-9.6V, VGS =0V, TJ =70
-25
Gate-to-Source Forward Leakage
VGS = -8.0V
-100
Gate-to-Source Reverse Leakage
VGS = 8.0V
100
Total Gate Charge
Qg
ID = -4.3A
12
18
Gate-to-Source Charge
Qgs
VDS = -6.0V
1.8
2.7
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -4.5V
2.9
4.4
Turn-On Delay Time
td(on)
VDD = -6V
12
Rise Time
tr
ID = -1.0A
18
Turn-Off Delay Time
td(off)
RD =6
160
Fall Time
tf
VGS = -4.5V
170
Input Capacitance
Ciss
VGS = 0V
1400
Output Capacitance
Coss
VDS = -10V
310
Reverse Transfer Capacitance
Crss
f = 1.0MHz
240
Continuous Source Current
Body Diode)
IS
-1.0
Pulsed Source Current
Body Diode) *2
ISM
-17
Diode Forward Voltage
VSD
TJ =25
,IS =-1.0A, VGS =0V*1
-1.2
V
Reverse Recovery Time
trr
TJ =25
,IF =-1.0A
35
53
ns
Reverse RecoveryCharge
Qrr
di/dt = -100A/
s*1
20
30
nC
*1 Pulse width
400
s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
ns
Drain-to-Source Leakage Current
A
A
IGSS
nA
nC
pF
KRF7756




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