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BFP181TW Datasheet(PDF) 2 Page - Vishay Siliconix |
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BFP181TW Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85012 Rev. 1.4, 02-Mar-05 BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter cut-off current VCE = 15 V, VBE = 0 ICES 100 µA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 10 V Collector-emitter saturation voltage IC = 15 mA, IB =1.5 mA VCEsat 0.1 0.4 V DC forward current transfer ratio VCE = 6 V, IC = 5 mA hFE 50 100 150 VCE = 6 V, IC = 10 mA hFE 100 |
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