BFP181TW datasheet(2/5 Pages) VISHAY

Part #	BFP181TW

Description	Silicon NPN Planar RF Transistor

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85012

Rev. 1.4, 02-Mar-05

BFP181T / BFP181TW / BFP181TRW

Vishay Semiconductors

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter cut-off current

VCE = 15 V, VBE = 0

ICES

100

µA

Collector-base cut-off current

VCB = 10 V, IE = 0

ICBO

100

nA

Emitter-base cut-off current

VEB = 1 V, IC = 0

IEBO

1

µA

Collector-emitter breakdown

voltage

IC = 1 mA, IB = 0

V(BR)CEO

10

V

Collector-emitter saturation

voltage

IC = 15 mA, IB =1.5 mA

VCEsat

0.1

0.4

V

DC forward current transfer ratio VCE = 6 V, IC = 5 mA

hFE

50

100

150

VCE = 6 V, IC = 10 mA

hFE

100

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