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LT3800EFE-PBF Datasheet(PDF) 8 Page - Linear Technology

Part # LT3800EFE-PBF
Description  High-Voltage Synchronous Current Mode Step-Down Controller
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LT3800EFE-PBF Datasheet(HTML) 8 Page - Linear Technology

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LT3800
8
3800fb
Overview
The LT3800 is a high input voltage range step-down
synchronous DC/DC converter controller IC that uses a
200kHz constant frequency, current mode architecture
with external N-channel MOSFET switches.
The LT3800 has provisions for high efficiency, low load
operation for battery-powered applications. Burst Mode
operation reduces total average input quiescent currents
to 100
µAduringnoloadconditions.Alowcurrentshutdown
mode can also be activated, reducing quiescent current to
<10
µA. Burst Mode operation can be disabled if desired.
The LT3800 also employs a reverse-current inhibit fea-
ture, allowing increased efficiencies during light loads
through nonsynchronous operation. This feature disables
the synchronous switch if inductor current approaches
zero. If full time synchronous operation is desired, this
feature can be disabled.
Much of the LT3800’s internal circuitry is biased from an
internal linear regulator. The output of this regulator is the
VCC pin, allowing bypassing of the internal regulator. The
associated internal circuitry can be powered from the
output of the converter, increasing overall converter effi-
ciency. Using externally derived power also eliminates the
IC’s power dissipation associated with the internal VIN to
VCC regulator.
Theory of Operation (See Block Diagram)
The LT3800 senses converter output voltage via the VFB
pin. The difference between the voltage on this pin and an
internal 1.231V reference is amplified to generate an error
voltage on the VC pin which is, in turn, used as a threshold
for the current sense comparator.
During normal operation, the LT3800 internal oscillator
runs at 200kHz. At the beginning of each oscillator cycle,
the switch drive is enabled. The switch drive stays enabled
until the sensed switch current exceeds the VC derived
threshold for the current sense comparator and, in turn,
disables the switch driver. If the current comparator
APPLICATIO S I FOR ATIO
threshold is not obtained for the entire oscillator cycle, the
switch driver is disabled at the end of the cycle for 450ns.
This minimum off-time mode of operation assures regen-
eration of the BOOST bootstrapped supply.
Power Requirements
The LT3800 is biased using a local linear regulator to
generate internal operational voltages from the VIN pin.
Virtually all of the circuitry in the LT3800 is biased via an
internal linear regulator output (VCC). This pin is decoupled
with a low ESR 1
µF capacitor to PGND.
The VCC regulator generates an 8V output provided there
is ample voltage on the VIN pin. The VCC regulator has
approximately 1V of dropout, and will follow the VIN pin
with voltages below the dropout threshold.
The LT3800 has a start-up requirement of VIN > 7.5V. This
assures that the onboard regulator has ample headroom
to bring the VCC pin above its UVLO threshold. The VCC
regulator can only source current, so forcing the VCC pin
above its 8V regulated voltage allows use of externally
derived power for the IC, minimizing power dissipation in
the IC. Using the onboard regulator for start-up, then
deriving power for VCC from the converter output maxi-
mizes conversion efficiencies and is common practice. If
VCC is maintained above 6.5V using an external source, the
LT3800 can continue to operate with VIN as low as 4V.
The LT3800 operates with 3mA quiescent current from the
VCC supply. This current is a fraction of the actual VCC
quiescent currents during normal operation. Additional
current is produced from the MOSFET switching currents
for both the boosted and synchronous switches and are
typically derived from the VCC supply.
Because the LT3800 uses a linear regulator to generate
VCC, power dissipation can become a concern with high
VIN voltages. Gate drive currents are typically in the range
of 5mA to 15mA per MOSFET, so gate drive currents can
create substantial power dissipation. It is advisable to
derive VCC and VBOOST power from an external source
whenever possible.


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