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2SA1205 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1205 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1205 DESCRIPTION ·With TO-3PN package Fig.1 simplified outline (TO-3PN) and symbol ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A IB B Base current -4 A PC Collector power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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