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BDY90A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY90A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY90A DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEX Collector-Emitter Voltage(VEB= 0) 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous 2 A IBM Base Current-Peak 3 A IE Emitter Current-Continuous -15 A IEM Emitter Current-Peak -15 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W isc Website:www.iscsemi.cn |
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