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BUV70 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV70 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV70 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed APPLICATIONS ·Designed for motor controls, switching mode power supplies applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous 3 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 140 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.89 ℃/W isc Website:www.iscsemi.cn |
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